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US 2022/0102190 A1Published application
Semiconductor processing method
AssigneeASM IP Holding B.V.
InventorHeeSung Kang
Life of this patent
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Abstract
A substrate processing method of easily forming an air gap includes: forming a first insulating layer having a first step coverage on a patterned structure including a first protrusion and a second protrusion; and forming, on the first insulating layer, a second insulating layer having a second step coverage lower than the first step coverage, wherein an air gap is formed between the first protrusion and the second protrusion by repeating the forming of the second insulating layer.
Claims20
A substrate processing method comprising:
- forming a first insulating layer having a first step coverage on a patterned structure including a first protrusion and a second protrusion;
- and
- forming, on the first insulating layer, a second insulating layer having a second step coverage lower than the first step coverage,
- wherein an air gap is formed between the first protrusion and the second protrusion by repeating the forming of the second insulating layer.
1 more element
A substrate processing method comprising:
- depositing an insulating layer on a patterned structure having a first protrusion and a second protrusion to form an air gap between the patterned structure and the insulating layer,
- wherein an air gap is formed between the first protrusion and the second protrusion by maintaining pressure in a reaction space such that a mean free path of gas supplied to a reaction space decreases and by setting power of plasma such that the amount of ions generated in the reaction space decreases.
A substrate processing method comprising:
- forming an air gap between a patterned structure and an insulating layer by setting power of plasma to about 100 W to about 400 W and applying the power for about 0.1 second to about 1 second to deposit the insulating layer having a step coverage of about 60% or less on the patterned structure.
Dependencies are inferred from the claim text.