Asymmetrical sealing and gas flow control device
AssigneeSamsung Electronics Co., Ltd.
InventorsJUNE HEE LEE, Young Jong Yoon, Seok Heon Yu, Pill Kyu Jin, Jeong Woo Woo
Life of this patent
Estimating the term…
Abstract
A sealing device configured for use in a vacuum chamber between a reaction region of the vacuum chamber and an exhaust port includes a ring-shaped body with an upper surface and a lower surface. A distance between the upper surface and the lower surface of the sealing device is a thickness of the ring-shaped body. The thickness of the ring-shaped body differs along a circumference of the ring-shaped body such that the ring-shaped body has a wedge shape. The thickness of the ring-shaped body, around its circumference is dependent upon a structure of the exhaust port.
Claims20
A substrate processing method, comprising:
- spraying a process gas into a reaction region between a gas distribution plate and a substrate;
- processing the substrate with the process gas;
- discharging the process gas from the reaction region into an exhaust passage through a first gap and a second gap between the gas distribution plate and an upper seal;
- and
- discharging the process gas from the exhaust passage into an outside through an exhaust port,
- wherein a distance between the first gap and the exhaust port is less than a distance between the second gap and the exhaust port,
- wherein the first gap has an inner width and an outer width smaller than the inner width, and
- wherein the second gap has an outer width and an inner width smaller than the outer width.
A substrate processing method, comprising:
- spraying a process gas into a reaction region between a gas distribution plate and a substrate;
- processing the substrate with the process gas;
- discharging the process gas from the reaction region into an exhaust passage through a first gap and a second gap between the gas distribution plate and an upper seal;
- and
- discharging the process gas from the exhaust passage into an outside through an exhaust port,
- wherein a distance between the first gap and the exhaust port is less than a distance between the second gap and the exhaust port,
- wherein the first gap becomes narrower as it approaches the exhaust passage, and wherein the second gap becomes wider as it approaches the exhaust passage.
A substrate processing method, comprising:
- spraying a process gas into a reaction region between a gas distribution plate and a substrate;
- processing the substrate with the process gas;
- discharging the process gas from the reaction region into an exhaust passage through a first gap and a second gap between the gas distribution plate and an upper seal;
- and
- discharging the process gas from the exhaust passage into an outside through an exhaust port,
- wherein a distance between the first gap and the exhaust port is less than a distance between the second gap and the exhaust port,
- wherein a discharging rate of the process gas through the first gap is substantially equal to a discharging rate of the process gas through the second gap, and
- wherein an exhaust rate of the process gas from a portion of the exhaust passage adjacent to the first gap is greater than an exhaust rate of the process gas from a portion of the exhaust passage adjacent to the second gap.
Dependencies are inferred from the claim text.