Etching method and etching apparatus

An etching apparatus comprising:

• a chamber in which an object to be processed is disposed;
• an exhaust unit for reducing a pressure in the chamber;
• a gas supply unit for supplying a processing gas into the chamber;
• and
• a control unit configured to execute a physical adsorption process of physically adsorbing an adsorbate based on a first processing gas on a film to be etched under a condition that a pressure of the first processing gas is smaller than a saturated vapor pressure of the first processing gas with respect to a temperature of the object to be processed while cooling the object to be processed on which the film to be etched is formed, and an etching process of etching the film to be etched by reacting the adsorbate with the film to be etched by a plasma of a second processing gas.