Novel method for forming silicon or silicon compound pattern in semiconductor manufacturing process
AssigneeYoung Chang Chemical Co., Ltd
InventorsSu Jin LEE, Gi Hong KIM, Seung Hun LEE, Seung Hyun LEE
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Abstract
Disclosed is a method of forming a fine silicon pattern with a high aspect ratio for fabrication of a semiconductor device. The method includes a cleaning process of removing organic residue or reside originating in fumes using a cleaning solution, thereby enabling formation of a desired pattern while preventing the pattern from being lifted. Thus, the present disclosure enables formation of a fine pattern by using a novel cleaning method.
Claims12
A method of forming a silicon pattern or a silicon compound pattern in a process of depositing a polymer layer or a predetermined compound layer in the presence of a silicon oxide pattern under a silicon layer or a silicon compound layer, the method comprising:
- sequentially performing deposition of an organic film and an inorganic film on a silicon oxide pattern, application of a photoresist film, and formation of a photoresist pattern through exposure and development of the photoresist film;
- performing a first dry etching process using an etching gas with the photoresist pattern being served as an etching mask;
- cleaning, using a cleaning solution, a wafer with residue of the organic film remaining thereon to prevent pattern lifting attributable to impurities generated during the etching before deposition of the polymer layer or the predetermined compound layer;
- and
- performing a second dry etching process to etch the polymer layer or the predetermined compound layer.
Dependencies are inferred from the claim text.