Masking Layer With Post Treatment
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen-Ju Chen, Chung-Ting Ko, Wan-Chen Hsieh, Chun-Ming Lung, Tai-Chun Huang, Chi On Chui
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Abstract
A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.
Claims20
A method, comprising:
- forming a semiconductor layer over a substrate;
- etching a portion of the semiconductor layer to form a first recess and a second recess;
- forming a first masking layer over the semiconductor layer;
- performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer;
- etching the first masking layer to expose the first recess;
- forming a first semiconductor material in the first recess;
- and
- removing the first masking layer.
A method, comprising:
- forming a semiconductor layer over a first substrate;
- etching the semiconductor layer to form a first recess in a first region and a second recess in a second region;
- depositing a first masking layer over the first region and the second region;
- roughening the first masking layer;
- removing the first masking layer from the second region;
- forming a first epitaxial source/drain region in the second recess;
- removing a remainder of the first masking layer;
- depositing a second masking layer over the first region and the second region;
- roughening the second masking layer;
- removing the second masking layer from the first region;
- forming a second epitaxial source/drain region in the first recess;
- removing a remainder of the second masking layer;
- and
- forming a gate structure over the semiconductor layer.
A method, comprising:
- depositing a masking layer over a substrate, the substrate comprising a first recess and a second recess;
- performing a post-deposition treatment on the masking layer;
- anisotropically etching the masking layer to expose the second recess;
- epitaxially growing a first portion of a semiconductor material over the masking layer and a second portion of the semiconductor material in the second recess, the first portion comprising discontinuous nodules;
- and
- isotropically etching to remove the masking layer.
Dependencies are inferred from the claim text.