Patterning material including silicon-containing layer and method for semiconductor device fabrication
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSzu-Ping TUNG, Chun-Kai CHEN, Tze-Liang LEE, Yi-Nien SU
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Abstract
In one exemplary aspect, the present disclosure is directed to a method for lithography patterning. The method includes providing a substrate and forming a target layer over the substrate. A patterning layer is formed by depositing a first layer having an organic composition; depositing a second layer including over 50 atomic percent of silicon; and depositing a photosensitive layer on the second layer. In some implementations, the second layer is deposited by ALD, CVD, or PVD processes.
Claims20
A method for lithography patterning, comprising:
- providing a substrate;
- forming a target layer over the substrate;
- and
- forming a patterning layer, wherein the forming the patterning layer, includes:
- depositing a first layer having an organic composition;
- depositing a second layer including over 50 atomic percent of silicon;
- and
- depositing a photosensitive layer on the second layer.
A method for lithography patterning, comprising:
- providing a target layer;
- depositing an organic bottom layer of a multi-layer patterning stack;
- forming a silicon-containing layer of the multi-layer patterning stack over the organic bottom layer using a deposition process providing of precursors delivered toward a surface of the organic bottom layer and chemically modifying the precursors to obtain the silicon-containing layer on the surface, wherein the silicon-containing layer has at least 50% silicon;
- forming a resist layer over the silicon-containing layer;
- exposing a portion of the resist layer to a radiation to provide a patterned resist layer;
- etching a portion of the silicon-containing layer uncovered by the patterned resist layer to form a patterned silicon-containing layer;
- after etching the portion of the silicon-containing layer, etching a portion of the organic bottom layer uncovered by the patterned silicon-containing layer to form a patterned organic bottom layer;
- and
- using the patterned bottom organic layer to define a pattern in the target layer.
A method of patterning a semiconductor device, the method comprising:
- depositing a carbon-containing layer over a substrate;
- depositing an amorphous silicon layer directly on the carbon-containing layer;
- spin coating a photosensitive layer over the amorphous silicon layer;
- and
- using a lithography process, patterning the photosensitive layer to provide a first opening;
- etching the amorphous silicon layer through the first opening;
- using the etched amorphous silicon layer as a masking element during an etching of the deposited carbon-containing layer.
Dependencies are inferred from the claim text.