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US 2022/0102149 A1Published application
Method for forming film layer
AssigneeChangxin Memory Technologies, Inc.
InventorZhonglei WANG
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Abstract
A method for forming a film layer includes: a substrate is provided; a pretreatment step is performed, in which the pretreatment step includes providing a reaction source gas, which forms attachment points on the substrate; and a deposition step is performed, in which the reaction source gas is formed into a plasma, which is deposited on the substrate based on the attachment points to form a first film layer.
Claims13
A method for forming a film layer, comprising:
- providing a substrate;
- performing a pretreatment step, wherein the pretreatment step includes providing a reaction source gas, wherein the reaction source gas forms attachment points on the substrate;
- and
- performing a deposition step, wherein the reaction source gas is formed into plasma, and the plasma is deposited on the substrate based on the attachment points to form a first film layer.
1 more element
Dependencies are inferred from the claim text.