Method of using dual frequency rf power in a process chamber

A method for cleaning a chamber, comprising:

• introducing a gas to a processing volume of the chamber;
• providing a first radiofrequency (RF) power having a first frequency of about 40 MHz or greater to a lid of the chamber;
• providing a second RF power having a second frequency to an electrode disposed in a substrate support within the processing volume, wherein the second frequency is about 10 MHz to about 20 MHz;
• and
• removing at least a portion of a film disposed on a surface of a chamber component of the chamber.

A method of processing a substrate, comprising:

• introducing a gas to a processing volume of a chamber;
• providing a first radiofrequency (RF) power having a first frequency of about 40 MHz or greater to a lid of the chamber;
• providing a second RF power having a second frequency to an electrode disposed in a substrate support within the processing volume, wherein the second frequency is about 10 MHz to about 40 MHz;
• and
• depositing a film having a thickness of about 5 KÅ to about 3 μm on the substrate disposed on the substrate support and at least one surface of a chamber component.