Back to results
US 2022/0102139 A1Published application
System and method for multiple step directional patterning
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Kai YANG, Yu-Tien SHEN, Hsiang-Ming CHANG, Chun-Yen CHANG, Ya-Hui CHANG, Wei-Ting CHIEN, Chia-Cheng CHEN, Liang-Yin CHEN
Life of this patent
Estimating the term…
Abstract
A semiconductor process system includes an ion source configured to bombard with a photoresist structure on a wafer. The semiconductor process system reduces a width of the photoresist structure by bombarding the photoresist structure with ions in multiple distinct ion bombardment steps having different characteristics.
Claims20
A method, comprising:
- depositing photoresist on a substrate;
- forming a trench in the photoresist;
- widening the trench by:
- bombarding a first side of the trench with ions from a first angle;
- and
- bombarding the first side of the trench with ions from a second angle different from the first angle.
3 more elements
A method, comprising:
- depositing photoresist on a substrate;
- forming a photoresist structure by patterning the photoresist;
- reducing a width of the photoresist structure by:
- bombarding a first side of the photoresist structure with ions having a first energy;
- and
- bombarding the first side of the photoresist structure with ions having a second energy different than the first energy after bombarding the first side of the photoresist structure with ions having the first energy.
3 more elements
A system, comprising:
- a semiconductor process chamber;
- a wafer support configured to support a wafer in the semiconductor process chamber;
- an ion source positioned to bombard the wafer with ions;
- and
- a control system coupled to the ion source and including:
- at least one processor;
- and
- at least one memory coupled to the at least one processor, the at least one memory having stored therein, instructions which, when executed by the one or more processors, cause the ion source to bombard, from a first angle, a side of a photoresist structure on a wafer in a first ion bombardment step, to bombard, from the first angle, the side of the photoresist structure in second ion bombardment step, and to bombard, from a second angle different than the first angle, the side of the photoresist structure in a third ion bombardment step.
5 more elements
Dependencies are inferred from the claim text.