Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium

A substrate processing method, comprising:

• (a) loading a substrate into a process container;
• (b) performing a process of forming a film on the substrate in the process container by alternately or simultaneously performing, a predetermined number of times:
• supplying a precursor gas from a first supplier to the substrate;
• and
• supplying a reaction gas from a second supplier to the substrate;
• (c) unloading the processed substrate from an interior of the process container;
• and
• (d) oxidizing at least one part of a film formed inside the process container in (b) so as to change the at least one part into an oxide film in a state in which the processed substrate is unloaded from the interior of the process container,
• wherein in (d), an oxygen-containing gas and a hydrogen-containing gas are supplied into the process container and at that time, the hydrogen-containing gas is supplied toward the first supplier.

A substrate processing apparatus, comprising:

• a process container in which a substrate is processed;
• a precursor gas supply system configured to supply a precursor gas from a first supplier to the substrate in the process container;
• a reaction gas supply system configured to supply a reaction gas from a second supplier to the substrate in the process container;
• an oxygen-containing gas supply system configured to supply an oxygen-containing gas into the process container;
• a hydrogen-containing gas supply system configured to supply a hydrogen-containing gas into the process container;
• a transporter configured to transport the substrate into and out of the process container;
• and
• a controller configured to be capable of controlling the precursor gas supply system, the reaction gas supply system, the oxygen-containing gas supply system, the hydrogen-containing gas supply system, and the transporter so as to perform:
• (a) loading the substrate into the process container;
• (b) performing a process of forming a film on the substrate in the process container by alternately or simultaneously performing, a predetermined number of times:
• supplying the precursor gas from the first supplier to the substrate;
• and
• supplying the reaction gas from the second supplier to the substrate;
• (c) unloading the processed substrate from an interior of the process container;
• and
• (d) oxidizing at least one part of a film formed inside the process container in (b) so as to change the at least one part into an oxide film in a state in which the processed substrate is unloaded from the interior of the process container,
• wherein in (d), the oxygen-containing gas and the hydrogen-containing gas are supplied into the process container and at that time, the hydrogen-containing gas is supplied toward the first supplier.

A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform:

• (a) loading a substrate into a process container;
• (b) performing a process of forming a film on the substrate in the process container by alternately or simultaneously performing, a predetermined number of times:
• supplying a precursor gas from a first supplier to the substrate;
• and
• supplying a reaction gas from a second supplier to the substrate;
• (c) unloading the processed substrate from an interior of the process container;
• and
• (d) oxidizing at least one part of a film formed inside the process container in (b) so as to change the at least one part into an oxide film in a state in which the processed substrate is unloaded from the interior of the process container,
• wherein in (d), an oxygen-containing gas and a hydrogen-containing gas are supplied into the process container and at that time, the hydrogen-containing gas is supplied toward the first supplier.