Ion source including structured sample for ionization
AssigneeHelmholtz-Zentrum Potsdam - Deutsches Geoforschungszentrum GFZ Stiftung des Offentlichen Rechts des
InventorMichael Wiedenbeck
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Abstract
An ion source is provided that includes a structured sample and a method for the ionization and/or its enhancement is provided, which preferably relies on field emission and/or field ionization processes. These processes can be brought about by structures with appropriate geometries, which cause a high electric field gradient at or near the sample.
Claims20
An ion source comprising a sample (1) to be ionized and extraction means for generating a first electric field gradient orthogonal to the surface of the sample (1) in order to extract and/or accelerate ions from said sample (1), characterized in that the ion source comprises a structure (2) comprising at least two galvanically separated substructures (3,4) and means for supplying one or more electric voltages to said substructures (3,4) to generate a second electric field gradient in close proximity to the surface of the sample (2) so as to improve ion production efficiency, wherein the substructures (3,4) of the structure (2) are separated at least in one region by a distance of less than 10−3 m and the means for supplying one or more electric voltages are configured to apply an electric voltage between said substructures to generate a second electric field gradient of at least 106 V/m at a zone in close proximity to the surface of the sample (1).
A method for the fabrication and use of a structure for the ionization of a substance (1), comprising:
- applying a structure (2) at an interface to an area
- deploying a substance (1) across the area,
- applying an electric field gradient of at least 106 V/m within the area by use of the structure (2),
- inducing ionization of the substance (1), the structure (2) comprises at least two galvanically separated substructures separated at least in one region of the area by a distance of less than 10−3 m and wherein an electric voltage of at least 10 V is applied between said substructures (3,4) and whereas the area has a size of at least 10 μm2.
Dependencies are inferred from the claim text.