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US 2022/0102120 A1Published application
Operating method of etching device
AssigneeNanya Technology Corporation
InventorsFeng-Ju TSAI, Shyue-Ru DOONG
Life of this patent
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Abstract
A method includes the following steps. A wafer is disposed on a wafer-mounting surface of a wafer holder that is disposed in a chamber. The wafer-mounting surface is in parallel with a gravity direction. A gas is flown from a gas source to vacuum sealing device. An inductive coil wrapping around a vacuum sealing device excites the gas into plasma. The plasma is injected to the wafer.
Claims5
A method, comprising:
- disposing a wafer on a wafer-mounting surface of a wafer holder that is disposed in a chamber, wherein the wafer-mounting surface is in parallel with a gravity direction;
- flowing gas from a gas source to a vacuum sealing device, wherein an inductive coil wrapping around the vacuum sealing device excites the gas into plasma;
- and
- injecting the plasma to the wafer.
1 more element
Dependencies are inferred from the claim text.