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US 2022/0101932 A1Published application
String current reduction during multistrobe sensing to reduce read disturb
AssigneeIntel Corporation
InventorsPranav Kalavade, Rohit S. Shenoy, Golnaz Karbasian
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Abstract
A memory device comprising a memory array; and controller circuitry to apply a first pass voltage to a first plurality of unselected wordlines of the memory array during a string current sensing phase; and reduce the first pass voltage applied to the first plurality of unselected wordlines during a multistrobe sensing phase that follows the string current sensing phase.
Claims20
A memory device comprising:
- a memory array;
- and
- controller circuitry to:
- apply a first pass voltage to a first plurality of unselected wordlines of the memory array during a string current sensing phase;
- and
- reduce the first pass voltage applied to the first plurality of unselected wordlines during a multistrobe sensing phase that follows the string current sensing phase.
3 more elements
A method comprising:
- applying a first pass voltage to a first plurality of unselected wordlines of a memory array during a string current sensing phase;
- and
- reducing the first pass voltage applied to the first plurality of unselected wordlines during a multistrobe sensing phase that follows the string current sensing phase.
A system comprising:
- a storage device controller;
- and
- a plurality of memory chips, wherein a memory chip comprises:
- a memory array;
- and
- controller circuitry to:
- apply a first pass voltage to a first plurality of unselected wordlines of the memory array during a string current sensing phase;
- and
- reduce the first pass voltage applied to the first plurality of unselected wordlines during a multistrobe sensing phase that follows the string current sensing phase.
6 more elements
Dependencies are inferred from the claim text.