Method for programming 3d nand flash memory

A method for programming a 3D NAND flash memory, comprising:

• S1) providing a 3D NAND flash memory array having a plurality of storage modules each of which including an upper sub-storage module and a lower sub-storage module, and eliminating residual charges in the 3D NAND flash memory array;
• S2) strobing a bit line where the upper sub-storage module is located, to program a to-be-programmed memory cell in the upper sub-storage module;
• S3) applying a drain voltage to the drain of the to-be-programmed memory cell, and floating the source of the to-be-programmed memory cell, to generate primary electrons in the to-be-programmed memory cell, wherein the primary electrons accelerate to collide with a substrate to generate secondary electrons;
• S4) applying a programming voltage to the gate of the to-be-programmed memory cell, to enable the secondary electrons to generate tertiary electrons and to inject the tertiary electrons into a floating gate of the to-be-programmed memory cell, to complete programming;
• and
• S5) after completing the programming of the upper sub-storage module and maintaining the upper sub-storage module in a programmed state, strobing a bit line where the lower sub-storage module is located, and repeating operation S3) and operation S4) to achieve programming of the lower sub-storage module.