Memory device and method of operating the same
AssigneeSK hynix Inc.
InventorsTae Hun PARK, Nam Kyeong KIM
Life of this patent
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Abstract
Provided is a memory device. The memory device may include a voltage code controller configured to generate a voltage code that generates a program voltage and pass voltages based on a number of times a program loop is performed, and a voltage generator configured to generate the program voltage and the pass voltages in response to the voltage code, transmit the program voltage to a selected word line, and transmit the pass voltages to unselected word lines, wherein the voltage generator is configured to sequentially increase the pass voltage that is applied to the unselected word lines in order of proximity to the selected word line as the number of times a program loop is performed increases.
Claims19
A memory device, comprising:
- a voltage code controller configured to generate a voltage code that generates a program voltage and pass voltages based on a number of times a program loop is performed;
- and
- a voltage generator configured to generate the program voltage and the pass voltages in response to the voltage code, transmit the program voltage to a selected word line, and transmit the pass voltages to unselected word lines,
- wherein the voltage generator is configured to sequentially increase the pass voltage that is applied to the unselected word lines, in order of proximity to the selected word line, as the number of times a program loop is performed increases.
A method of operating a memory device, comprising:
- setting up a first step voltage to increase a program voltage and a second step voltage to increases pass voltages;
- performing a program loop with an operation of applying the program voltage to a selected word line and a verify operation of verifying memory cells that are coupled to the selected word line;
- increasing the program voltage by the first step voltage when a number of times a program loop is performed increases;
- and
- increasing the pass voltages that are applied to unselected word lines by the second step voltage, in order of proximity to the selected word line, as the number of times a program loop is performed increases.
A method of operating a memory device, comprising:
- increasing a program voltage that is applied to a selected word line stepwise when a number of times a program loop is performed increases;
- increasing a pass voltage that is applied to unselected word lines that are adjacent to the selected word line stepwise as the number of times a program loop is performed increases;
- and
- increasing a number of unselected word lines to which the pass voltage increased stepwise is applied as the number of times a program loop is performed increases.
Dependencies are inferred from the claim text.