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US 2022/0101922 A1Published application
Control method and controller of 3d nand flash
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsYing Huang, Hongtao Liu, Qiguang Wang, Wenzhe Wei
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Abstract
A memory device includes a memory array including a cell, and a controller coupled to the memory array. The controller is configured to control sequentially applying programming voltage pulses to the cell. A pulse width of each of the programming voltage pulses decreases as a pulse count of the programming voltage pulses increases.
Claims20
A method for programing a memory array comprising a cell, the method comprising:
- sequentially applying programming voltage pulses to the cell, wherein a pulse width of each of the programming voltage pulses decreases as a pulse count of the programming voltage pulses increases.
A memory device, comprising:
- a memory array comprising a cell;
- and
- a controller coupled to the memory array and configured to:
- control sequentially applying programming voltage pulses to the cell, wherein a pulse width of each of the programming voltage pulses decreases as a pulse count of the programming voltage pulses increases.
1 more element
Dependencies are inferred from the claim text.