Semiconductor device and method of operating the same

A semiconductor device, comprising:

• a cell array including memory cells that each store multi-bit data;
• a voltage generator configured to generate a first program pulse having a positive polarity, a second program pulse having the positive polarity and having at least one of a peak level, a peak period, and a falling slew rate different from those of the first program pulse, a third program pulse having a negative polarity, and a fourth program pulse having the negative polarity and having at least one of a peak level, a peak period, and a rising slew rate different from those of the third program pulse;
• and
• a control logic circuit configured to receive data that is to be programmed into a memory cell selected from the memory cells, and to apply a program pulse to the selected memory cell to perform a program operation, the program pulse being determined depending on a logic state of the data and being selected from among the first to fourth program pulses.

A semiconductor device, comprising:

• a cell array including memory cells;
• a voltage generator configured to generate a first program pulse having a positive polarity and a second program pulse having a negative polarity and having at least one of a peak level, a peak period, and a slew rate different from those of the first program pulse;
• and
• a control logic circuit configured to receive data that is to be programmed into a memory cell selected from the memory cells, and to apply a program pulse to the selected memory cell to perform a program operation, the program pulse being determined depending on a logic state of the data and being selected from among the first and second program pulses.