Non-volatile memory having virtual ground circuitry

A memory comprising:

• virtual ground circuitry coupled to a first power supply terminal and a second power supply terminal and configured to generate a virtual ground voltage at a virtual ground node, wherein the first power supply terminal is configured to provide a first power supply voltage and the second power supply terminal is configured to provide a second power supply voltage which is less than the first power supply voltage, wherein the virtual ground voltage is greater than zero volts and is between the first power supply voltage and the second power supply voltage;
• a memory array of resistive memory cells, each resistive memory cell of the memory array including a select transistor and a resistive storage element for storing a value, wherein each resistive memory cell is coupled to a first column line of a plurality of first column lines;
• a first decoder configured to select a set of first column lines from the plurality of first column lines for a memory read operation from a selected set of the resistive memory cells coupled to the selected set of first column lines;
• read circuitry configured to provide a read value stored in the selected set of resistive memory cells during the memory read operation;
• and
• a first column line multiplexer (MUX) configured to couple each selected first column line of the set of first column lines to the read circuitry during the memory read operation, and configured to couple each unselected first column line of the plurality of first column lines to the virtual ground node during the memory read operation.