Memory device, sense amplifier and method for mismatch compensation
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorKu-Feng Lin
Life of this patent
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Abstract
A memory device that includes a first memory cell, a second memory cell and a sense amplifier. The sense amplifier includes a first branch and a second branch and are configured to output a first voltage and a second voltage to the first memory and the second memory, respectively in a trimming operation. A first clamp device of the sense amplifier includes a first clamp transistor and a plurality of first trimming transistors that are coupled to the first clamp transistor in parallel. The gate terminals of the first clamp transistor and the plurality of first trimming transistors are biased by a fixed clamp voltage. Each of the plurality of first trimming transistors is selectively conducted to compensate a mismatch between the first voltage and the second voltage.
Claims20
A memory device, comprising:
- a first memory cell;
- a second memory cell;
- and
- a sense amplifier, comprising:
- a first branch, comprising a first clamp device, configured to output a first voltage to the first memory cell in a trimming operation;
- a second branch, comprising a second clamp device, configured to output a second voltage to the second memory cell in the trimming operation,
- wherein the first clamp device comprises a first clamp transistor and a plurality of first trimming transistors coupled to the first clamp transistor in parallel, gate terminals of the first clamp transistor and the plurality of first trimming transistors are biased by a fixed clamp voltage, and each of the plurality of first trimming transistors is selectively conducted to compensate a mismatch between the first voltage and the second voltage.
A sense amplifier, comprising:
- a first branch, comprising a first clamp device, configured to output a first voltage;
- and
- a second branch, configured to output a second voltage,
- wherein the first clamp device comprises a first clamp transistor and a plurality of first trimming transistors coupled to the first clamp transistor in parallel, gate terminals of the first clamp transistor and the plurality of first trimming transistors are biased by a fixed clamp voltage, and each of the plurality of first trimming transistors is selectively conducted to compensate a mismatch between the first voltage and the second voltage.
A method of compensating a mismatch between a first voltage and a second voltage in a sense amplifier, comprising:
- determining the mismatch between the first voltage and the second voltage;
- selecting a first number of trimming transistors from a plurality of first trimming transistors that is coupled to a first clamp transistor in parallel according to the mismatch between the first voltage and the second voltage;
- biasing gate terminals of the first clamp transistor and the plurality of first trimming transistors with a fixed clamp voltage;
- and
- conducting the first number of the trimming transistors to compensate the mismatch between the first voltage and the second voltage.
Dependencies are inferred from the claim text.