System and method of cleaning process chambers using plasma

A method of cleaning comprising:

• introducing a gas mixture comprising argon gas, nitrogen gas, and oxygen gas to a remote plasma source, the gas mixture comprising a nitrogen gas to oxygen gas ratio of between about 1:1000 to about 1:5 by volume;
• energizing the gas mixture to form a plasma comprising oxygen radicals, argon radicals, and nitrogen radicals;
• introducing the plasma to a process volume of a process chamber, the process chamber comprising:
• a chamber body and a lid defining a volume of the process chamber,
• a substrate support disposed in the volume of the process chamber,
• a faceplate disposed between the substrate support and the lid, and
• a blocker plate disposed between the faceplate and the lid, the blocker plate comprising a plurality of perforations, each perforation having a diameter of about 0.1 mm to about 2 mm;
• and
• exposing the faceplate within the process volume to the plasma.

A method comprising:

• coating a portion of a chamber component with a coating selected from the group consisting of a metal oxide, a metal nitride, a silicon containing composition, and combination(s) thereof;
• processing the chamber component using processing conditions;
• and
• exposing the portion of chamber component to a plasma comprising oxygen radicals, argon radicals, and nitrogen radicals, wherein the plasma is formed from a gas mixture comprising an argon gas to oxygen gas ratio of about 0.2:1 to about 1:1 by volume and a nitrogen gas to oxygen gas ratio of between about 1:1000 to about 1:5 by volume.