Fabrication of gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layer

An integrated circuit structure, comprising:

• a first vertical arrangement of horizontal nanowires;
• a second vertical arrangement of horizontal nanowires;
• a first gate stack over the first vertical arrangement of horizontal nanowires, the first gate stack having a P-type conductive layer on a first gate dielectric comprising a high-k dielectric layer on a first dipole material layer, the P-type conductive layer comprising molybdenum and nitrogen;
• and
• a second gate stack over the second vertical arrangement of horizontal nanowires, the second gate stack having an N-type conductive layer on a second gate dielectric comprising the high-k dielectric layer on a second dipole material layer.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a first vertical arrangement of horizontal nanowires;
• a second vertical arrangement of horizontal nanowires;
• a first gate stack over the first vertical arrangement of horizontal nanowires, the first gate stack having a P-type conductive layer on a first gate dielectric, the P-type conductive layer comprising molybdenum and nitrogen;
• and
• a second gate stack over the second vertical arrangement of horizontal nanowires, the second gate stack having an N-type conductive layer on a second gate dielectric.