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US 2022/0093590 A1Published application
Selective growth self-aligned gate endcap (sage) architectures without fin end gap
AssigneeIntel Corporation
InventorsLeonard P. GULER, Zachary GEIGER, Glenn A. GLASS, Szuya S. LIAO
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Abstract
Self-aligned gate endcap (SAGE) architectures without fin end gaps, and methods of fabricating self-aligned gate endcap (SAGE) architectures without fin end gaps, are described. In an example, an integrated circuit structure includes a semiconductor fin having a cut along a length of the semiconductor fin. A gate endcap isolation structure is in a location of the cut of the semiconductor fin and in contact with the semiconductor fin.
Claims20
An integrated circuit structure, comprising:
- a semiconductor fin having a cut along a length of the semiconductor fin;
- and
- a gate endcap isolation structure in a location of the cut of the semiconductor fin and in contact with the semiconductor fin.
An integrated circuit structure, comprising:
- a first semiconductor fin having a cut along a length of the first semiconductor fin;
- a second semiconductor fin having a cut along a length of the second semiconductor fin;
- and
- a gate endcap isolation structure in a location of the cuts of the first and second semiconductor fins and in contact with the first and second semiconductor fins.
1 more element
A computing device, comprising:
- a board;
- and
- a component coupled to the board, the component including an integrated circuit structure, comprising:
- a semiconductor fin having a cut along a length of the semiconductor fin;
- and
- a gate endcap isolation structure in a location of the cut of the semiconductor fin and in contact with the semiconductor fin.
3 more elements
Dependencies are inferred from the claim text.