Fabrication of gate-all-around integrated circuit structures having adjacent island structures

An integrated circuit structure, comprising:

• a semiconductor island on a semiconductor substrate;
• a vertical arrangement of horizontal nanowires above a fin protruding from the semiconductor substrate, a channel region of the vertical arrangement of horizontal nanowires electrically isolated from the fin;
• an isolation structure on the substrate and laterally proximate to the fin;
• and
• a fin structure on the isolation structure.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a semiconductor island on a semiconductor substrate;
• a first vertical arrangement of horizontal nanowires above a first fin protruding from the semiconductor substrate, a channel region of the first vertical arrangement of horizontal nanowires electrically isolated from the fin;
• and
• a second vertical arrangement of horizontal nanowires above a second fin protruding from the semiconductor substrate, a channel region of the second vertical arrangement of horizontal nanowires electrically isolated from the second fin, wherein the semiconductor island is between the first vertical arrangement of horizontal nanowires and the second vertical arrangement of horizontal nanowires.