Epitaxial structure of ga-face group iii nitride, active device, and gate protection device thereof

A gate protection device, which is an AlGaN/GaN HEMT applied for a power management integrated circuit, the gate protection device comprising,

• an epitaxial structure of Ga-face AlGaN/GaN;
• a drain electrode, formed on the epitaxial structure of Ga-face AlGaN/GaN, and electrically connected to a driving signal terminal of the power management integrated circuit;
• a gate electrode, formed on the epitaxial structure of Ga-face AlGaN/GaN;
• and
• a source electrode, formed on the epitaxial structure of Ga-face AlGaN/GaN, electrically connected to the gate electrode and a gate electrode of a p-GaN gate E-mode AlGaN/GaN HEMT;
• wherein the epitaxial structure of Ga-face AlGaN/GaN includes:
• a silicon substrate;
• a buffer layer (C-doped), located on the silicon substrate;
• an i-GaN (C-doped) layer, located on the buffer layer (C-doped);
• an i-AlyGaN buffer layer, located on the i-GaN (C-doped) layer;
• an i-GaN channel layer, located on the i-AlyGaN buffer layer, the 2DEG formed in the i-GaN channel layer;
• and
• an i-AlxGaN layer, located on the i-GaN channel layer, where x<0.23 and y=0.05˜0.2.

A gate protection device, which is an AlGaN/GaN HEMT controlled by a power management integrated circuit, the gate protection device comprising,

• an epitaxial structure of Ga-face AlGaN/GaN;
• a gate electrode, formed on the epitaxial structure of Ga-face AlGaN/GaN;
• and
• a source electrode, formed on the epitaxial structure of Ga-face AlGaN/GaN, electrically connected to the gate electrode and a gate electrode of a p-GaN gate E-mode AlGaN/GaN HEMT;
• wherein the epitaxial structure of Ga-face AlGaN/GaN includes:
• a silicon substrate;
• a buffer layer (C-doped), located on the silicon substrate;
• an i-GaN (C-doped) layer, located on the buffer layer (C-doped);
• an i-AlyGaN buffer layer, located on the i-GaN (C-doped) layer;
• an i-GaN channel layer, located on the i-AlyGaN buffer layer, the 2DEG formed in the i-GaN channel layer;
• and
• an i-AlxGaN layer, located on the i-GaN channel layer, where x<0.23 and y=0.05˜0.2.