Micro led device and method for manufacturing same

A method for producing a micro-LED device, comprising:

• providing a multilayer stack which includes
• a frontplane supported by a crystal growth substrate, the frontplane including a plurality of micro-LEDs, each of which includes a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type, and a device isolation region located between the plurality of micro-LEDs, the device isolation region including at least one metal plug electrically coupled with the second semiconductor layer, and
• a middle layer supported by the frontplane, the middle layer including a plurality of first contact electrodes respectively electrically coupled with the first semiconductor layer of the plurality of micro-LEDs and at least one second contact electrode coupled with the metal plug;
• forming a backplane on the multilayer stack, the backplane including an electric circuit electrically coupled with the plurality of micro-LEDs via the plurality of first contact electrodes and the at least one second contact electrode, the electric circuit including a plurality of thin film transistors;
• dividing the multilayer stack and the backplane into a plurality of light-emitting device units;
• covering the backplane with an expandable film and securing the multilayer stack and the backplane to the expandable film;
• a delamination step which includes delaminating the multilayer stack, the backplane and the expandable film from the crystal growth substrate;
• and
• expanding the expandable film, thereby enlarging a gap between the plurality of light-emitting device units,
• wherein forming the backplane includes
• depositing a semiconductor layer on the multilayer stack, and
• patterning the semiconductor layer deposited on the multilayer stack.

A method for producing a micro-LED device, comprising:

• providing a multilayer stack which includes
• a frontplane supported by a crystal growth substrate, the frontplane including a plurality of micro-LEDs, each of which includes a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type, and a device isolation region located between the plurality of micro-LEDs, the device isolation region including at least one metal plug electrically coupled with the second semiconductor layer, and
• a middle layer supported by the frontplane, the middle layer including a plurality of first contact electrodes respectively electrically coupled with the first semiconductor layer of the plurality of micro-LEDs and at least one second contact electrode coupled with the metal plug;
• forming a backplane on the multilayer stack, the backplane including an electric circuit electrically coupled with the plurality of micro-LEDs via the plurality of first contact electrodes and the at least one second contact electrode, the electric circuit including a plurality of thin film transistors;
• covering the backplane with an expandable film and securing the multilayer stack and the backplane to the expandable film;
• a delamination step which includes delaminating the multilayer stack, the backplane and the expandable film from the crystal growth substrate;
• performing dicing on the device isolation region, thereby dividing the multilayer stack and the backplane into a plurality of light-emitting device units each supported by the expandable film, and
• expanding the expandable film, thereby enlarging a gap between the plurality of light-emitting device units,
• wherein forming the backplane includes
• depositing a semiconductor layer on the multilayer stack, and
• patterning the semiconductor layer deposited on the multilayer stack.