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US 2022/0093550 A1Published application
Method of manufacturing semiconductor structure
AssigneeNanya Technology Corporation
InventorHsih-Yang CHIU
Life of this patent
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Abstract
A semiconductor structure includes a dielectric layer, a conductive pad embedded in the dielectric layer, and a bump disposed on the conductive pad, wherein the bump has a first top width and a bottom width, the first top width is greater than the bottom width, and a pair of spacers is disposed adjacent to the bump.
Claims6
A method of manufacturing a semiconductor structure, the method comprising:
- receiving a dielectric layer embedded with a conductive pad;
- forming a photoresist layer with a first hole on the dielectric layer, wherein the first hole substantially corresponds to the conductive pad;
- forming a pair of spacers on a sidewall of the first hole to form a second hole between the pair of spacers;
- forming a bump in the second hole;
- and
- removing the photoresist layer.
3 more elements
Dependencies are inferred from the claim text.