Hybrid bonding structures, semiconductor devices having the same, and methods of manufacturing the semiconductor devices

A semiconductor device, comprising:

• a circuit board;
• a semiconductor chip;
• and
• a hybrid bonding structure between the circuit board and the semiconductor chip, the hybrid bonding structure including
• a solder ball, and
• a solder paste bonded to the solder ball,
• wherein the solder paste includes a transient liquid phase,
• wherein the transient liquid phase includes a core and a shell on a surface of the core,
• wherein a melting point of the shell is lower than a melting point of the core,
• wherein the core and the shell are configured to form an intermetallic compound in response to the transient liquid phase at least partially being at a temperature that is within a temperature range of about 20° C. to about 190° C.

A method of manufacturing a semiconductor device, the method comprising:

• forming a semiconductor chip;
• arranging a solder ball on the semiconductor chip;
• applying a solder paste to a circuit board, the solder paste including a flux and a transient liquid phase, the transient liquid phase including a core and a shell;
• positioning the solder ball to face the solder paste;
• melting the shell at about 20° C. to about 190° C. to form an intermetallic compound between the shell and the core;
• and
• bonding the semiconductor chip to the circuit board.

A solder paste composition, comprising:

• a core;
• and
• a shell on a surface of the core,
• wherein a melting point of the shell is lower than a melting point of the core,
• wherein the core and the shell are configured to form an intermetallic compound in response to the solder paste composition at least partially being at a temperature that is within a temperature range of about 20° C. to about 190° C.