Method for fabricating semiconductor device with slanted conductive layers
AssigneeNanya Technology Corporation
InventorKUO-HUI SU
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Abstract
The present application discloses a method for fabricating a semiconductor device with slanted conductive layers. The method for fabricating a semiconductor device includes providing a substrate, forming a first insulating layer above the substrate, forming first slanted recesses along the first insulating layer, and forming first slanted conductive layers in the first slanted recesses and a top conductive layer covering the first slanted conductive layers.
Claims19
A method for fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a first insulating layer above the substrate;
- forming first slanted recesses along the first insulating layer;
- and
- forming first slanted conductive layers in the first slanted recesses and a top conductive layer covering the first slanted conductive layers.
The method for fabricating the semiconductor device of claim 8, wherein the first slanted conductive layers are arranged in a grid dot pattern in a top-view perspective.
The method for fabricating the semiconductor device of claim 11, further comprising:
- forming a barrier layer positioned between the first insulating layer and the first slanted conductive layers, between the top conductive layer and the first insulating layer, and between the first slanted conductive layers and the substrate, wherein the barrier layer is formed of titanium, titanium nitride, titanium silicon nitride, tantalum, tantalum nitride, tantalum silicon nitride, or a combination thereof.
The method for fabricating the semiconductor device of claim 12, wherein a thickness of the barrier layer is between about 10 angstroms and about 15 angstroms.
The method for fabricating the semiconductor device of claim 14, further comprising:
- forming an under bump metallization layer positioned between the first insulating layer and the first slanted conductive layers, between the top conductive layer and the first insulating layer, and between the first slanted conductive layers and the substrate, wherein the under bump metallization layer comprises titanium, titanium-tungsten, chromium, aluminum, copper, nickel, chromium-copper, or nickel-vanadium.
Dependencies are inferred from the claim text.