Semiconductor device

A semiconductor device, comprising:

• a semiconductor element with a semiconductor layer;
• and
• a wiring layer on the semiconductor element, the wiring layer including:
• a first electrode on the semiconductor element,
• a second electrode on the semiconductor element,
• a third electrode on the semiconductor element,
• an insulating film on the first electrode, the second electrode and the third electrode,
• a first electrode pad on the insulating film, having a first bonding surface on the side opposite to the side facing the semiconductor element, a first portion of the first, second, and third electrodes being under the first electrode pad in a first direction orthogonal to the semiconductor layer, and
• a second electrode pad on the insulating film and spaced from the first electrode pad and having a second bonding surface on the side opposite to the side facing the semiconductor element, a second portion of the first, second, and third electrode being under the second electrode pad in the first direction, wherein
• the first electrode, the second electrode, and the third electrode are between the semiconductor element and the insulating film in the first direction,
• the second electrode and the first electrode pad are insulated from each other by the insulating film,
• the first electrode and the second electrode pad are insulated from each other by the insulating film,
• the first electrode and the first electrode pad connect to each other at a first opening in the insulating film,
• the second electrode and the second electrode pad connect to each other at a second opening in the insulating film,
• the distance, along the first direction, from the bonding surface of the first electrode pad to the semiconductor layer at the location where the first electrode pad connects to the first electrode is greater than the distance from the bonding surface of the first electrode pad to the semiconductor layer at a location above the second electrode, and
• the distance, along the first direction, from the bonding surface of the second electrode pad to the semiconductor layer at the location where the second electrode pad connects to the second electrode is greater than the distance from the bonding surface of the second electrode pad to the semiconductor layer at a location above the first electrode.

A semiconductor device, comprising:

• a semiconductor element including a nitride semiconductor layer;
• a source electrode on the semiconductor element at a first location;
• a drain electrode on the semiconductor element at a second location spaced from the first location;
• a gate electrode on the semiconductor element at a third location between the first and second locations;
• an insulating film on the semiconductor element and covering the source electrode, the drain electrode and the gate electrode;
• a first electrode pad on the insulating film;
• and
• a second electrode pad on the insulating film spaced from the first electrode pad, wherein
• the source electrode and the first electrode pad contact each other in a first opening in a first portion of the insulating film below the first electrode pad,
• the drain electrode and the second electrode pad contact each other in a second opening in a second portion of the insulating film below the second electrode pad,
• a bonding surface of the first electrode pad is at a first distance from the semiconductor element for a portion of the first electrode pad on the first portion of the insulating film, and at a second distance from the semiconductor element for a portion of the first electrode pad on other than the first portion of the insulating film, the first distance being greater than the second distance, and
• a bonding surface of the second electrode pad is at a third distance from the semiconductor element for a portion of the second electrode pad on the second portion of the insulating film, and a fourth distance from the semiconductor element for a portion of the second electrode pad on other than the second portion of the insulating film, the third distance being greater than the fourth distance.