Method for fabricating semiconductor device with graphene layers
AssigneeNanya Technology Corporation
InventorTSE-YAO HUANG
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Abstract
The present application discloses a method for fabricating a semiconductor device with graphene layers The method includes providing a substrate; forming a first passivation layer above the substrate; forming a redistribution layer on the first passivation layer; forming a first adjustment layer on the redistribution layer; forming a pad layer on the first adjustment layer; forming a second adjustment layer between the pad layer and the first adjustment layer; forming a second passivation layer on the first passivation layer; wherein the first adjustment layer and the second adjustment layer are formed of graphene.
Claims20
A method for fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a first passivation layer above the substrate;
- forming a redistribution layer on the first passivation layer;
- forming a first adjustment layer on the redistribution layer;
- forming a pad layer on the first adjustment layer;
- forming a second adjustment layer between the pad layer and the first adjustment layer;
- forming a second passivation layer on the first passivation layer;
- wherein the first adjustment layer and the second adjustment layer are formed of graphene.
A method for fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a redistribution layer above the substrate;
- forming a first adjustment layer on the redistribution layer;
- forming a second adjustment layer on the first adjustment layer;
- and
- forming a pad layer on the second adjustment layer;
- wherein the first adjustment layer and the second adjustment layer are formed of graphene.
Dependencies are inferred from the claim text.