Power delivery for embedded bridge die utilizing trench structures

A method of forming a microelectronic package structure comprising:

• forming a first plurality of openings only partially through an interconnect bridge structure, wherein the interconnect bridge structure further comprises a plurality of conductive layers beneath the plurality of openings, the plurality of conductive layers comprising a power structure exposed by the first plurality of openings, the power structure comprising a first plurality of conductive lines along a first direction and a second plurality of conductive lines along a second direction different than the first direction,;
• forming a conductive material in the plurality of openings and on the power structure;
• and
• embedding the interconnect bridge structure into a package substrate.

A microelectronic system, comprising:

• a board;
• a microelectronic package attached to the board, wherein the microelectronic package comprises:
• a die disposed on a surface of a package substrate;
• an interconnect bridge embedded at least partially in the package substrate, the interconnect bridge comprising a power structure and at least one vertical interconnect structure, the power structure comprising a first plurality of conductive lines along a first direction and a second plurality of conductive lines along a second direction different than the first direction, the at least one vertical interconnect structure disposed through only a portion of the interconnect bridge, and the at least one vertical interconnect structure vertically beneath and coupled to the power structure, wherein the at least one vertical interconnect structure is electrically coupled to the die.