Embedded multi-die interconnect bridge having a molded region with through-mold vias

A microelectronic assembly, comprising:

• a package substrate having a first surface and an opposing second surface;
• an interconnect bridge in the package substrate, the interconnect bridge including:
• a substrate having a surface, wherein the substrate includes conductive pathways;
• and
• a mold material region at the surface, wherein the mold material region includes a plurality of through-mold vias (TMVs) electrically coupled to the conductive pathways, and wherein the mold material region is at the second surface of the package substrate;
• and
• a die, at the second surface of the package substrate, electrically coupled to one or more of the plurality of TMVs of the interconnect bridge by first interconnects having a pitch between 15 microns and 70 microns and to the package substrate by second interconnects.

A computing device, comprising:

• a microelectronic assembly, including:
• a package substrate having a first surface and an opposing second surface;
• an interconnect bridge in the package substrate, the interconnect bridge including:
• a substrate having a surface, wherein the substrate includes conductive pathways;
• and
• a mold material region at the surface, wherein the mold material region includes a plurality of through-mold vias (TMVs) electrically coupled to the conductive pathways, and wherein the mold material region is at the second surface of the package substrate;
• a die electrically coupled, at the second surface of the package substrate, to one or more of the plurality of TMVs of the interconnect bridge via first interconnects having a first pitch between 15 microns and 70 microns and to the package substrate via second interconnects having a second pitch between 50 microns and 500 microns;
• and
• a circuit board electrically coupled to the first surface of the package substrate.