Deposition of graphene on a dielectric surface for next generation interconnects
AssigneeIntel Corporation
InventorsNita CHANDRASEKHAR, AKM Shaestagir CHOWDHURY
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AssigneeIntel Corporation
InventorsNita CHANDRASEKHAR, AKM Shaestagir CHOWDHURY
Estimating the term…
An integrated circuit structure, comprises a dielectric material having an opening therein, the opening defined by sides and a bottom. A graphene barrier material is conformal to the sides and the bottom of the opening, and a conductive metal over the graphene barrier material that fills at least a portion of a remainder of the opening in the dielectric material. The graphene barrier is formed by applying a non-hydrogen based plasma pretreatment to the dielectric surface, including the sides and the bottom of the opening, to substantially remove any passivation and provide an activated dielectric surface. A carbon-based precursor is exposed to the activated dielectric surface at less than approximately 400° C. to form the graphene barrier.
An integrated circuit structure, comprising:
An integrated circuit structure, comprising:
A computing device, comprising:
A computing device, comprising:
Dependencies are inferred from the claim text.