Molded RF power package

A molded radiofrequency, ‘RF’, power package, comprising:

• a heat-conducting substrate having a first surface and an opposing second surface, wherein the second surface of the heat-conducting substrate is exposed on a backside of the package;
• a semiconductor die having a first side and a second side, the semiconductor die being arranged with its first side on the first surface of the heat-conducting substrate, said semiconductor die having an RF power transistor integrated on its second side;
• a plurality of leads;
• a body of solidified molding compound that fixedly connects the heat-conducting substrate to the plurality of leads by directly adhering to the plurality of leads and the heat-conducting substrate;
• a lid fixedly connected to the body of solidified molding compound;
• wherein each lead comprises a first lead end, an opposing second lead end, a first segment connected directly to the first lead end, and a second segment connected directly on one end to the second lead end and on an opposing end to the first segment;
• wherein the RF power transistor is connected to the first lead ends of the plurality of leads using a plurality of bondwires;
• wherein, for each lead, the first and second segment fully extend inside and outside the body of solidified molding compound, respectively;
• wherein the second segments of the plurality of leads are bent or configured to be bent thereby dividing each second segment in:
• a first sub-segment extending substantially parallel to the heat-conducting substrate and away from the body of solidified molding compound;
• a curved sub-segment;
• and
• a second sub-segment extending obliquely relative to the first sub-segment and connected to the first sub-segment through the curved sub-segment;
• wherein the leads each further comprise a weakening structure arranged at least partially in the curved sub-segment, the weakening structure comprising at least one of a recess in or hole through the lead.