Management of heat on a semiconductor device and methods for producing the same

A memory module comprising:

• a substrate having a surface, the surface having a central portion, a first array area on one side of the central portion and a second array area on an opposite side of the central portion, wherein the first array area is cooler than the second array area during operation;
• a first semiconductor die attached to the substrate in the first array area on the surface such that the first semiconductor die is located upstream of the central portion with respect to an airflow across the surface, wherein the first semiconductor die has a first performance rating of an operating parameter affected by temperature;
• and
• a second semiconductor die attached to the substrate in the second array area such that the second semiconductor die is located downstream of the central portion with respect to the airflow across the surface, wherein the second semiconductor die has a second performance rating of the operating parameter indicating that the second semiconductor die operates more effectively than the first semiconductor die at higher temperatures, and wherein the first and second semiconductor dies are the same type of dies.

A memory module comprising:

• a substrate that includes a central portion, an upstream edge, a downstream edge opposite the upstream edge, a first array area between the upstream edge and the central portion, a second array area between the downstream edge and the central portions, and a surface extending from the upstream edge to the downstream edge, wherein:
• the surface includes one or more die attach locations in each of the first and second array areas,
• the upstream edge is upstream from the central portion with respect to an airflow across the substrate, and
• the downstream edge is downstream from the central portion with respect to the airflow across the substrate, and
• a first semiconductor die attached to the surface of the substrate in a first die attach location in the first array area;
• and
• a second semiconductor die attached to the surface of the substrate in a second die attach location in the second array area;
• wherein the first semiconductor die has a performance metric of an operating parameter with a first variance based on temperature and the second semiconductor die has the performance metric of the operating parameter with a second variance less than the first variance.