Semiconductor device structure and methods of forming the same

A semiconductor device structure, comprising:

• a first gate electrode layer;
• a second gate electrode layer adjacent the first gate electrode layer;
• a dielectric feature disposed between the first gate electrode layer and the second gate electrode layer, wherein the dielectric feature has a first surface;
• a first conductive layer disposed on the first gate electrode layer, wherein the first conductive layer has a second surface;
• a second conductive layer disposed on the second gate electrode layer, wherein the second conductive layer has a third surface, wherein the first surface, the second surface, and the third surface are coplanar;
• a third conductive layer disposed over the first conductive layer;
• a fourth conductive layer disposed over the second conductive layer;
• a dielectric layer disposed on the first surface of the dielectric feature, wherein the dielectric layer is disposed between the third conductive layer and the fourth conductive layer;
• a first plurality of semiconductor layers, wherein the first gate electrode layer surrounds the first plurality of semiconductor layers;
• and
• a second plurality of semiconductor layers, wherein the second gate electrode layer surrounds the second plurality of semiconductor layers.

A semiconductor device structure, comprising:

• a first gate electrode layer;
• a second gate electrode layer adjacent the first gate electrode layer;
• a dielectric feature disposed between the first gate electrode layer and the second gate electrode layer, wherein the dielectric feature comprises:
• a liner;
• a dielectric material disposed on the liner;
• a high-K dielectric liner disposed on the liner and the dielectric material;
• and
• a low-K dielectric material disposed on the high-K dielectric liner;
• a dielectric layer disposed on the low-K dielectric material;
• a first conductive layer disposed over the first gate electrode layer;
• and
• a second conductive layer disposed over the second gate electrode layer, wherein the dielectric layer is disposed between the first conductive layer and the second conductive layer.

The method of claim 18, wherein forming the dielectric feature comprises:

• forming a liner between the first and second fins;
• forming a dielectric material on the liner;
• forming a high-K dielectric liner on the liner and the dielectric material;
• and
• forming a low-K dielectric material on the high-K dielectric liner.

A method for forming a semiconductor device structure, comprising:

• forming first and second fins from a substrate, wherein the first fin includes a first plurality of semiconductor layers and the second fin includes a second plurality of semiconductor layers;
• forming a dielectric feature between the first and second fins;
• forming a gate electrode layer surrounding the first and second pluralities of semiconductor layers;
• forming a first dielectric layer on the dielectric feature;
• forming a first conductive layer over the gate electrode layer, wherein the first dielectric layer separates the first conductive layer into two segments;
• and
• forming a second conductive layer on the gate electrode layer, wherein the dielectric feature separates the second conductive layer into two segments.