Device chip manufacturing method
AssigneeDisco Corporation
InventorKazuki HIGASHIYAMA
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Abstract
A device chip manufacturing method for dividing a silicon wafer formed with devices in each of regions of a front surface partitioned by a plurality of streets includes coating the front surface of the silicon wafer with a resist film, exposing the silicon wafer by removing the resist film in regions along the streets, forming deep grooves by alternately repeating isotropic etching and coating with a passivation film, and subjecting bottom portions of the deep grooves to anisotropic etching to form division grooves, thereby dividing the silicon wafer.
Claims4
A device chip manufacturing method for dividing a silicon wafer formed with devices in each of regions of a front surface partitioned by a plurality of mutually intersecting streets, into individual device chips, the device chip manufacturing method comprising:
- a resist film coating step of coating the front surface of the silicon wafer with a resist film;
- an exposing step of removing the resist film in regions along the streets to expose the silicon wafer;
- a silicon wafer conveying-in step of conveying the silicon wafer into a plasma etching apparatus;
- a deep groove forming step of alternately repeating isotropic etching using a plasma of a CF4 gas or an SF6 gas and coating of regions exposed by the isotropic etching with a passivation film by use of a plasma of a C4F8 gas to process the silicon wafer along the streets, thereby forming deep grooves not reaching a back surface of the silicon wafer;
- and
- a dividing step of subjecting bottom portions of the deep grooves to anisotropic etching by use of a plasma of a mixed gas of SF6 and O2 to form division grooves reaching the back surface of the silicon wafer, thereby dividing the silicon wafer into the individual device chips.
Dependencies are inferred from the claim text.