TSV Structure and Method Forming Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Tsu Chung, Ku-Feng Yang, Tsang-Jiuh Wu, Wen-Chih Chiou, Chen-Hua Yu
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Abstract
A method includes forming a plurality of dielectric layers over a semiconductor substrate, etching the plurality of dielectric layers and the semiconductor substrate to form an opening, depositing a first liner extending into the opening, and depositing a second liner over the first liner. The second liner extends into the opening. The method further includes filling a conductive material into the opening to form a through-via, and forming conductive features on opposing sides of the semiconductor substrate. The conductive features are electrically interconnected through the through-via.
Claims20
A method comprising:
- forming a plurality of dielectric layers over a semiconductor substrate;
- etching the plurality of dielectric layers and the semiconductor substrate to form an opening;
- depositing a first liner extending into the opening;
- depositing a second liner over the first liner, wherein the second liner extends into the opening;
- filling a conductive material into the opening to form a through-via;
- and
- forming conductive features on opposite sides of the semiconductor substrate, wherein the conductive features are electrically interconnected through the through-via.
A structure comprising:
- a semiconductor substrate;
- a plurality of dielectric layers over the semiconductor substrate;
- a first conductive feature over the plurality of dielectric layers;
- a second conductive feature underlying the semiconductor substrate;
- a through-via penetrating through the semiconductor substrate and the plurality of dielectric layers, wherein the through-via electrically interconnects the first conductive feature and the second conductive feature;
- a first liner encircling the through-via;
- and
- a second liner encircling the first liner, wherein the second liner has a higher density than the first liner.
A structure comprising:
- a die comprising:
- a semiconductor substrate;
- a plurality of low-k dielectric layers over the semiconductor substrate;
- a through-via penetrating through the semiconductor substrate and the plurality of low-k dielectric layers;
- a first liner encircling the through-via, wherein the first liner extends to both a top end and a bottom end of the through-via;
- a second liner encircling the first liner, wherein the second liner is shorter than the through-via;
- a first electrical connector over the semiconductor substrate and at a top surface of the die;
- and
- a second electrical connector underlying the semiconductor substrate and at a bottom surface of the die, wherein the first electrical connector and the second electrical connector are electrically interconnected through the through-via.
Dependencies are inferred from the claim text.