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US 2022/0093451 A1Published application
Method for manufacturing semiconductor structure and semiconductor structure
AssigneeChangxin Memory Technologies, Inc.
InventorMengzhu QIAO
Life of this patent
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Abstract
A method for manufacturing a semiconductor structure includes: a substrate is provided, an isolation trench being formed on the substrate; a silicon-rich isolation layer is formed in the isolation trench, the silicon-rich isolation layer covering an inner surface of the isolation trench; and an isolation oxide layer is formed in the isolation trench. The isolation oxide layer fills up the isolation trench.
Claims16
A method for manufacturing a semiconductor structure, comprising:
- providing a substrate having an isolation trench;
- forming a silicon-rich isolation layer in the isolation trench, the silicon-rich isolation layer covering an inner surface of the isolation trench;
- and
- forming an isolation oxide layer in the isolation trench,
- wherein, the isolation oxide layer fills up the isolation trench.
2 more elements
A semiconductor structure, comprising:
- a substrate having isolation trenches and a plurality of active regions, and the isolation trenches being located between the plurality of active regions;
- and
- an isolation oxide layer located in the isolation trenches, and comprising a first isolation oxide layer and a second isolation oxide layer, and the first isolation oxide layer covering an inner surface of the isolation trenches,
- wherein at least part of the first isolation oxide layer is formed by oxidizing a silicon-rich isolation layer covering the inner surface of the isolation trenches.
1 more element
Dependencies are inferred from the claim text.