Semiconductor structure and method for manufacturing same
AssigneeChangxin Memory Technologies, Inc.
InventorsMing CHENG, Xing JIN, Ran LI
Life of this patent
Estimating the term…
Abstract
A semiconductor structure includes a substrate, bit line structures located on the substrate, capacitor contact holes located on each of two opposite sides of the bit line structure, and isolation side walls, each of the isolation side walls is located between a respective bit line structure and the capacitor contact holes on one side of the bit line structure. A gap isolation layer is provided between the isolation side walls located on two opposite sides of the bit line structure. The gap isolation layer is located on the bit line structure, and a first gap is provided inside the gap isolation layer. A second gap is provided between the isolation side wall and the gap isolation layer.
Claims15
A semiconductor structure, comprising:
- a substrate, bit line structures located on the substrate, and capacitor contact holes located on each of two opposite sides of the bit line structure;
- isolation side walls, each of which is located between a respective bit line structure and the capacitor contact holes on one side of the bit line structure, wherein a gap isolation layer is provided between the isolation side walls located on two opposite sides of the bit line structure;
- the gap isolation layer is located on the bit line structure, and a first gap is provided inside the gap isolation layer;
- and a second gap is provided between the isolation side wall and the gap isolation layer.
A method for manufacturing a semiconductor structure, comprising:
- providing a substrate and bit line structures located on the substrate, wherein each of the bit line structures comprises a top dielectric layer, and is provided with capacitor contact holes in each of two opposite sides of the bit line structure;
- forming a sacrificial side wall covering a side wall of the top dielectric layer;
- removing at least part of the top dielectric layer to form a first gap;
- performing a deposition process to form a gap isolation layer with the first gap;
- and
- forming an isolation side wall covering the sacrificial side wall, and removing at least part of the sacrificial side wall to form a second gap located between the isolation side wall and the gap isolation layer.
Dependencies are inferred from the claim text.