Methods and systems for cleaning high aspect ratio structures

A system, comprising:

• a processing chamber to process a substrate;
• and
• a controller to cause a processing method to be performed in the processing chamber, the processing method comprising:
• introducing a substrate to a processing volume of a processing chamber by positioning the substrate on a substrate support;
• flowing a first process gas into the processing volume, the first process gas comprising HF;
• flowing a second process gas into the processing volume, the second process gas comprising pyridine, pyrrole, aniline, or a combination thereof;
• and
• exposing the substrate to the first process gas and the second process gas to remove oxide from the substrate under oxide removal conditions.

A system, comprising:

• a processing chamber to process a substrate;
• and
• a controller to cause a processing method to be performed in the processing chamber, the processing method comprising:
• introducing a substrate to a processing volume of a processing chamber by positioning the substrate on a substrate support;
• flowing a first process gas into the processing volume, the first process gas comprising HF;
• flowing a second process gas into the processing volume, the second process gas comprising pyridine, pyrrole, aniline, or a combination thereof;
• and
• exposing the substrate to the first process gas and the second process gas to remove oxide from the substrate under oxide removal conditions, the oxide removal conditions comprising:
• maintaining the substrate at a temperature from about −10° C. to about 80° C.;
• maintaining the processing volume at a pressure of about 600 Torr or less;
• or
• a combination thereof.