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US 2022/0093412 A1Published application
Etchant Compositions
AssigneeEntegris, Inc.
InventorChia-Jung HSU
Life of this patent
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Abstract
Provided are compositions and methods for selectively etching hard mask layers and/or photoresist etch residues relative to low-k dielectric layers that are present. More specifically, the present invention relates to a composition and process for selectively etching titanium nitride and/or photoresist etch residues relative to low-k dielectric layers. Other materials that may be present on the microelectronic device should not be substantially removed or corroded by said compositions.
Claims9
A composition comprising:
- a. a solvent composition comprising:
- i. water;
- ii. a water-miscible organic solvent;
- iii. N-methylmorpholine-N-oxide;
- and
- iv. dimethyl sulfone;
- b. an oxidizing agent;
- c. a chelating agent;
- d. a corrosion inhibitor;
- e. at least one etchant or pH adjustor.
7 more elements
The composition of claim 5, wherein the etchant or pH adjustor is chosen from choline hydroxide and ammonium hydroxide.
Dependencies are inferred from the claim text.