Method of manufacturing semiconductor device, substrate processing apparatus, method of processing substrate, and recording medium
AssigneeKokusai Electric Corporation
InventorsArito OGAWA, Atsuro SEINO
Life of this patent
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Abstract
There is included (a) supplying a gas containing an organic ligand to a substrate; (b) supplying a metal-containing gas to the substrate; and (c) supplying a first reducing gas to the substrate, wherein after (a), a metal-containing film is formed on the substrate by performing (b) and (c) one or more times, respectively.
Claims19
A method of manufacturing a semiconductor device, comprising:
- (a) supplying a gas containing an organic ligand to a substrate;
- (b) supplying a metal-containing gas to the substrate;
- and
- (c) supplying a first reducing gas to the substrate,
- wherein after (a), a metal-containing film is formed on the substrate by performing (b) and (c) one or more times, respectively.
A substrate processing apparatus comprising:
- a process container in which a substrate is accommodated;
- a gas supply system configured to supply a metal-containing gas, a first reducing gas, and a gas containing an organic ligand into the process container;
- and
- a controller configured to be capable of controlling the gas supply system so as to perform a process including:
- (a) supplying the gas containing the organic ligand to the substrate;
- (b) supplying the metal-containing gas to the substrate;
- and
- (c) supplying the first reducing gas to the substrate,
- wherein after (a), a metal-containing film is formed on the substrate by performing (b) and (c) one or more times, respectively.
A method of processing a substrate, comprising:
- (a) supplying a gas containing an organic ligand to the substrate;
- (b) supplying a metal-containing gas to the substrate;
- and
- (c) supplying a first reducing gas to the substrate,
- wherein after (a), a metal-containing film is formed on the substrate by performing (b) and (c) one or more times, respectively.
A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising:
- (a) supplying a gas containing an organic ligand to a substrate;
- (b) supplying a metal-containing gas to the substrate;
- and
- (c) supplying a first reducing gas to the substrate,
- wherein after (a), a metal-containing film is formed on the substrate by performing (b) and (c) one or more times, respectively.
Dependencies are inferred from the claim text.