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US 2022/0093401 A1Published application
Manufacturing method of silicon carbide device and silicon carbide
AssigneeNuFlare Technology, Inc.
InventorKiyotaka Miyano
Life of this patent
Estimating the term…
Abstract
Provided is a method of manufacturing a semiconductor device according to an embodiment, including implanting carbon ions into a predetermined region of a silicon substrate; forming a silicon carbide layer on the silicon substrate by performing heat treatment on the silicon substrate implanted with the carbon ions; and removing at least a portion of the silicon substrate to expose the silicon carbide layer.
Claims21
1-18. (canceled)
A manufacturing method of a silicon carbide device, comprising:
- implanting carbon ions into a predetermined region of a silicon substrate from a top of the silicon substrate to form a carbon ion implantation region exposed to an atmosphere at a top side of the silicon substrate, a projected range of the carbon ions being 20 nm or more and 100 nm or less;
- performing heat treatment of the silicon substrate implanted with the carbon ions to form a silicon carbide layer being exposed to the atmosphere at the top side of the silicon substrate;
- and
- removing at least a portion of the silicon substrate from a back of the silicon substrate to expose the silicon carbide layer.
1 more element
A manufacturing method of a silicon carbide device, comprising:
- implanting oxygen ions into a predetermined region of a silicon substrate with a first projected range;
- implanting carbon ions into the predetermined region with a second projected range shallower than the first projected range;
- forming a silicon oxide layer in the silicon substrate by performing first heat treatment on the silicon substrate implanted with the oxygen ions;
- forming a silicon carbide layer in the silicon substrate by performing second heat treatment on the silicon substrate implanted with the carbon ions;
- and
- removing at least a portion of the silicon substrate to expose the silicon oxide layer and, after that, removing the silicon oxide layer to expose the silicon carbide layer.
3 more elements
A silicon carbide device comprising:
- a silicon carbide layer, manufactured by:
- implanting carbon ions into a predetermined region of a silicon substrate from a top of the silicon substrate to form a carbon ion implantation region exposed to an atmosphere at a top side of the silicon substrate, a projected range of the carbon ions being 20 nm or more and 100 nm or less;
- performing heat treatment of the silicon substrate implanted with the carbon ions to form a silicon carbide layer being exposed to the atmosphere at the top side of the silicon substrate;
- and
- removing at least a portion of the silicon substrate from a back of the silicon substrate to expose the silicon carbide layer.
2 more elements
Dependencies are inferred from the claim text.