Metal oxide nanoparticles as fillable hardmask materials
AssigneeIntel Corporation
InventorsMarie KRYSAK, Florian GSTREIN, Manish CHANDHOK
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AssigneeIntel Corporation
InventorsMarie KRYSAK, Florian GSTREIN, Manish CHANDHOK
Estimating the term…
A dielectric composition including a metal oxide particle including a diameter of 5 nanometers or less capped with an organic ligand at at least a 1:1 ratio. A method including synthesizing metal oxide particles including a diameter of 5 nanometers or less; and capping the metal oxide particles with an organic ligand at at least a 1:1 ratio. A method including forming an interconnect layer on a semiconductor substrate; forming a first hardmask material and a different second hardmask material on the interconnect layer, wherein at least one of the first hardmask material and the second hardmask material is formed over an area of interconnect layer target for a via landing and at least one of the first hardmask material and the second hardmask material include metal oxide nanoparticles; and forming an opening to the interconnect layer selectively through one of the first hardmask material and the second hardmask material.
A method comprising:
The method of claim 8, further comprising depositing the dispersed capped metal oxide particles on a semiconductor substrate and thermally curing to a metal oxide film on the semiconductor substrate.
A method comprising:
A method of fabricating a dielectric composition, the method comprising:
Dependencies are inferred from the claim text.