Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

A substrate processing apparatus, comprising:

• a process chamber in which a substrate is accommodated;
• a gas supplier configured to supply a first element-containing gas, a first reducing gas, a second element-containing gas and a second reducing gas into the process chamber;
• an exhauster configured to exhaust an inner atmosphere of the process chamber;
• and
• a controller configured to be capable of controlling the gas supplier and the exhauster to perform:
• (a) forming a first layer on the substrate by performing a first layer forming cycle once or more, wherein the first layer forming cycle comprises:
• (a1) supplying the first element-containing gas to the substrate in the process chamber;
• and
• (a2) supplying the first reducing gas to the substrate a plurality of times, and
• wherein (a1) and (a2) are sequentially performed in the first layer forming cycle;
• and
• (b) forming a second layer on the first layer by performing a second layer forming cycle once or more after (a), wherein the second layer forming cycle comprises:
• (b1) supplying the second element-containing gas to the substrate;
• and
• (b2) supplying the second reducing gas to the substrate, and
• wherein (b1) and (b2) are sequentially performed in the second layer forming cycle.

A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform:

• (a) forming a first layer on a substrate by performing a first layer forming cycle once or more, wherein the first layer forming cycle comprises:
• (a1) supplying a first element-containing gas to the substrate in a process chamber;
• and
• (a2) supplying a first reducing gas to the substrate a plurality of times, and
• wherein (a1) and (a2) are sequentially performed in the first layer forming cycle;
• and
• (b) forming a second layer on the first layer by performing a second layer forming cycle once or more after (a), wherein the second layer forming cycle comprises:
• (b1) supplying a second element-containing gas to the substrate;
• and
• (b2) supplying a second reducing gas to the substrate, and
• wherein (b1) and (b2) are sequentially performed in the second layer forming cycle.