Doping semiconductor films

A deposition method comprising:

• delivering a deposition precursor comprising boron, silicon, or germanium to a processing region of a semiconductor processing chamber;
• providing a dopant comprising carbon, nitrogen, sulfur, or oxygen to the processing region;
• forming a plasma of the deposition precursor and the dopant within the processing region of the semiconductor processing chamber;
• and
• depositing a material incorporating the dopant, wherein the material is characterized by an extinction coefficient of less than or about 0.35 at 633 nm.

A deposition method comprising:

• delivering at least one of a silicon-containing precursor, a boron-containing precursor, and a germanium-containing precursor to a processing region of a semiconductor processing chamber;
• delivering a dopant-containing precursor to the processing region of the semiconductor processing chamber, wherein the dopant-containing precursor includes one or more of carbon, nitrogen, oxygen, or sulfur;
• forming a plasma of all precursors within the processing region of the semiconductor processing chamber;
• and
• depositing a doped material on a substrate disposed within the processing region of the semiconductor processing chamber, wherein the doped material includes greater than or about 1 at. % of a dopant from the dopant-containing precursor.