Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium

A method of processing a substrate, comprising:

• (a) forming a base film, which has a reactivity with a film-forming inhibitor higher than a reactivity between the film-forming inhibitor and an inner surface of a concave portion formed on a surface of a substrate, at least in an upper portion in the concave portion by supplying a pre-treatment gas to the substrate;
• (b) forming a film-forming inhibition layer on a portion of a surface of the base film, which is formed in the upper portion in the concave portion, by supplying the film-forming inhibitor to the substrate;
• and
• (c) growing a film starting from a portion in the concave portion where the film-forming inhibition layer is not formed, by supplying a film-forming gas to the substrate.

A substrate processing apparatus comprising:

• a process chamber in which a substrate is processed;
• a pre-treatment gas supply system configured to supply a pre-treatment gas to the substrate in the process container;
• a film-forming inhibitor supply system configured to supply a film-forming inhibitor to the substrate in the process container;
• a film-forming gas supply system configured to supply a film-forming gas to the substrate in the process container;
• and
• a controller configured to be capable of controlling the pre-treatment gas supply system, the film-forming inhibitor supply system, and the film-forming gas supply system to perform a process in the process chamber, the process including:
• (a) forming a base film, which has a reactivity with the film-forming inhibitor higher than a reactivity between the film-forming inhibitor and an inner surface of a concave portion formed on a surface of the substrate, at least in an upper portion in the concave portion by supplying the pre-treatment gas to the substrate;
• (b) forming a film-forming inhibition layer on a portion of a surface of the base film, which is formed in the upper portion in the concave portion, by supplying the film-forming inhibitor to the substrate;
• and (c) growing a film starting from a portion in the concave portion where the film-forming inhibition layer is not formed, by supplying the film-forming gas to the substrate.

A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process in a process chamber of the substrate processing apparatus, the process comprising:

• (a) forming a base film, which has a reactivity with a film-forming inhibitor higher than a reactivity between the film-forming inhibitor and an inner surface of a concave portion formed on a surface of a substrate, at least in an upper portion in the concave portion by supplying a pre-treatment gas to the substrate;
• (b) forming a film-forming inhibition layer on a portion of a surface of the base film, which is formed in the upper portion in the concave portion, by supplying the film-forming inhibitor to the substrate;
• and
• (c) growing a film starting from a portion in the concave portion where the film-forming inhibition layer is not formed, by supplying a film-forming gas to the substrate.