Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

A substrate processing apparatus, comprising:

• a process chamber;
• a source gas supplier configured to supply a source gas containing a predetermined element to a substrate with a pattern formed on a surface thereof in the process chamber from an outer periphery of the substrate toward the surface of the substrate;
• an oxidizing gas supplier configured to supply an oxidizing gas to the substrate from the outer periphery of the substrate toward the surface of the substrate;
• and
• a controller configured to be capable of controlling the source gas supplier and the oxidizing gas supplier to form an oxide film containing the predetermined element on the surface of the substrate by performing a cycle a predetermined number of times, the cycle comprising:
• (a) forming a first layer containing the predetermined element on the surface of the substrate by supplying the source gas to the substrate;
• and
• (b) forming an oxide layer containing the predetermined element on the surface of the substrate by supplying the oxidizing gas to the substrate to oxidize the first layer,
• wherein (a) and (b) are performed non-simultaneously, and the controller is further configured to be capable of selecting a supply time of supplying the oxidizing gas to the substrate in (b) such that a thickness distribution of the oxide film becomes a predetermined distribution on the surface of the substrate.

A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform:

• forming an oxide film containing a predetermined element on a surface of a substrate wherein the surface is provided with a pattern formed thereon by performing a cycle a predetermined number of times, the cycle comprising:
• (a) forming a first layer containing the predetermined element on the surface of the substrate in a process chamber of the substrate processing apparatus by supplying a source gas containing the predetermined element to the substrate from an outer periphery of the substrate toward the surface of the substrate;
• and
• (b) forming an oxide layer containing the predetermined element on the surface of the substrate by supplying an oxidizing gas to the substrate from the outer periphery of the substrate toward the surface of the substrate to oxidize the first layer,
• wherein (a) and (b) are performed non-simultaneously, and a supply time of supplying the oxidizing gas to the substrate is selected in (b) such that a thickness distribution of the oxide film becomes a predetermined distribution on the surface of the substrate.