Plasma processing apparatus and plasma processing method

A plasma processing apparatus, comprising:

• a chamber providing a space for processing a substrate;
• a substrate stage configured to support the substrate within the chamber;
• an upper electrode facing the substrate stage;
• a focus ring in or on an upper peripheral region of the substrate stage to surround the substrate;
• a photoreactive material layer between the upper electrode and the substrate stage or between the focus ring and the substrate stage, and including a material whose capacitance is changeable according to an irradiated light;
• a plurality of light sources between the upper electrode and the photoreactive material layer or between the substrate stage and the photoreactive material layer, and configured to irradiate light onto the photoreactive material layer;
• and
• a power control portion configured to independently control operations of the plurality of light sources to irradiate the light to a local region of the photoreactive material layer.

A plasma processing apparatus, comprising:

• a chamber providing a space for processing a substrate;
• a substrate stage configured to support the substrate within the chamber, and including a lower electrode;
• an upper electrode facing the lower electrode;
• a focus ring in or on an upper peripheral region of the substrate stage to surround the substrate;
• a first plasma adjustment assembly between the upper electrode and the lower electrode, and including a first photoreactive material layer and a plurality of first light sources configured to irradiate light onto a local region of the first photoreactive material layer, wherein a capacitance of the local region of the first photoreactive material layer is changed when the light is irradiated to the local region of the first photoreactive material layer;
• and
• a second plasma adjustment assembly between the focus ring and the lower electrode, and including a second photoreactive material layer and a plurality of second light sources configured to irradiate light onto a local region of the second photoreactive material layer, wherein a capacitance of the local region of the second photoreactive material layer is changed when the light is irradiated to the local region of the second photoreactive material layer.